Synthesis and Surface Characterisation of Cu-Doped Tin Oxide Thin Film for Optoelectronic Applications.
1 Department of Physics and Engineering Physics, Obafemi Awolowo University, Ile-Ife, Nigeria
2 Department of Physics, Osun State University, Osogbo, Osun State, Nigeria
3 Centre for Energy Research and Development, Obafemi Awolowo University, Ile-Ife, Nigeria
4 Department of Physics, Institute of Applied Materials, Carbon Technology and Materials, University of Pretoria, Pretoria 0002, South Africa
* Corresponding author: adewumiolusegunemmanuel@njmse.msn.ng
2 Department of Physics, Osun State University, Osogbo, Osun State, Nigeria
3 Centre for Energy Research and Development, Obafemi Awolowo University, Ile-Ife, Nigeria
4 Department of Physics, Institute of Applied Materials, Carbon Technology and Materials, University of Pretoria, Pretoria 0002, South Africa
* Corresponding author: adewumiolusegunemmanuel@njmse.msn.ng
Abstract
Copper doped tin oxide thin film was synthesised by electrodeposition technique. Film growth was maintained at cathodic potential of 1.60 V at a varied deposition time. Surface morphological studies of the deposited films were achieved by field emission scanning electron microscopy (FE-SEM). The scanning electron microscopy image revealed evenly distributed films, across the substrate with rice-like or dome-like particles, depending on the deposition time. Post-annealing enhanced films crystallinity and particles agglomeration. Energy disperse X-ray spectra revealed the elemental constituents present in the film. The results obtained from electrical characterisation of the samples showed the ohmic properties of the deposited sample. X-ray diffraction results indicated that samples are polycrystalline in nature with tetragonal rutile structure. The average interplanar spacing and crystallite size of the samples were estimated as 2.93 Å and 202.5 Å respectively. Optical characterisation of the samples showed that absorption and transmittance across the ultraviolet-visible spectrum range depend on deposition time. The estimated energy band gaps of 3.06 eV suggested the films as good candidates for transparent contact electrodes in optoelectronic applications.
Keywords
Electrodeposition
Annealing
Doping
Crystallinity
Morphology
Energy band gap
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How to Cite
Emmanuel, A. O., Alade, T. B., Adekunle, A. S., Adewale, B. R., Oyeniran, O. K., & Ezekiel, O. (2020). Synthesis and Surface Characterisation of Cu-Doped Tin Oxide Thin Film for Optoelectronic Applications.. Nigerian Journal of Materials Science and Engineering, 10(1), 18-23.
A. O. Emmanuel, T. B. Alade, A. S. Adekunle, B. R. Adewale, O. K. Oyeniran, and O. Ezekiel, "Synthesis and Surface Characterisation of Cu-Doped Tin Oxide Thin Film for Optoelectronic Applications.," Nigerian Journal of Materials Science and Engineering, vol. 10, no. 1, pp. 18-23, June 2020.